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1/15 tda7296 february 2005 1 features multipower bcd technology very high operating voltage range (35v) dmos power stage high output power (up to 60w music power) muting/stand-by functions no switch on/off noise no boucherot cells very low distortion very low noise short circuit protection thermal shutdown 2 description the tda7296 is a monolithic integrated circuit in multiwatt15 package, intended for use as audio class ab amplifier in hi-fi field applications (home stereo, self powered loudspeakers, topclass tv). thanks to the wide voltage range and to the high out current capability it is able to supply the high- est power into both 4 ? and 8 ? loads even in pres- ence of poor supply regulation, with high supply voltage rejection. the built in muting function with turn on delay sim- plifies the remote operation avoiding switching on- off noises. 70v - 60w dmos audio amplifier with mute/st-by figure 2. typical application and test circuit in- 2 r2 680 ? c2 22 f c1 470nf in+ r1 22k r6 2.7 ? c10 100nf 3 r3 22k - + mute stby 4 vm vstby 10 9 in+mute mute stby r4 22k thermal shutdown s/c protection r5 10k c3 10 f c4 10 f 1 stby-gnd c5 22 f 713 14 6 15 8 -vs -pwvs boot- strap out +pwvs +vs c9 100nf c8 1000 f -vs d93au011 +vs c7 100nf c6 1000 f note: the boucherot cell r6, c10, normally not necessary for a stable operation it could be needed in presence of particular load impedances at v s <25v. rev. 10 fi gure 1. p ac k age table 1. order codes part number package tda7296 multiwatt15v tda7296hs multiwatt15h (short leads) multiwatt15v multiwatt15h (short leads)
tda7296 2/15 figure 3. pin connection table 2. absolute maximum ratings table 3. thermal data figure 4. block diagram symbol parameter value unit v s supply voltage (no signal) 35 v i o output peak current 5 a p tot power dissipation t case = 70c 50 w t op operating ambient temperature range 0 to 70 c t stg , t j storage and junction temperature 150 c symbol parameter typ. max unit r th j-case thermal resistance junction-case 1 1.5 c/w
3/15 tda7296 table 4. electrical characteristcs (refer to the test circuit v s = 24v, r l = 8 ? , g v = 30db; r g = 50 ? ; t amb = 25c, f = 1 khz; unless otherwise specified) . note (*): music power is the maximal power which the amplifier is capable of producing across the rated load resistance (regardless of no n linearity) 1 sec after the application of a sinusoidal input signal of frequency 1khz. note (**): tested with optimized application board (see fig.5) symbol parameter test condition min. typ. max. unit v s supply range 10 35 v i q quiescent current 20 30 65 ma i b input bias current 500 na v os input offset voltage -10 10 mv i os input offset current -100 100 na p o rms continuous output power d = 05% v s = 24v, r l = 8 ? ; v s = 21v, r l = 6 ? ; v s = 18v, r l = 4 ? ; 27 27 27 30 30 30 w w w music power (rms) ? t = 1s (*) d = 10% v s = 29v, r l = 8 ? ; v s = 24v, r l = 6 ? ; v s = 22v, r l = 4 ? ; 60 60 60 w w w d total harmonic distortion (**) p o = 5w; f = 1khz p o = 0.1 to 20w; f = 20hz to 20khz 0.005 0.1 % v s = 18v, r l = 4 ? ; p o = 5w; f = 1khz p o = 0.1 to 20w; f = 20hz to 20khz 0.01 0.1 % % sr slew rate 7 10 v/ s g v open loop voltage gain 80 db g v closed loop voltage gain (1) 24 30 40 db e n total input noise a = curve 1 v f = 20hz to 20khz 2 5 v f l , f h frequency response (-3db) p o =1w 20hz to 20khz r i input resistance 100 k ? svr supply voltage rejection f = 100hz; v ripple = 0.5vrms 60 75 db t s thermal shutdown 145 c stand-by function (ref: -vs or gnd) v st on stand-by on threshold 1.5 v v st off stand-by off threshold 3.5 v at t st-by stand-by attenuation 70 90 db i q st-by quiescent current @ stand-by 1 3 ma mute function (ref: -vs ro gnd) v mon mute on threshold 1.5 v v moff mute off threshold 3.5 v at t mute mute attenuation 60 80 db
tda7296 4/15 figure 5. p.c.b. and components layout of the circuit of figure 2. note: the stand-by and mute functions can be referred either to gnd or -vs. on the p.c.b. is possible to set both the configuration through the jumper j1.
5/15 tda7296 3 application suggestions (see test and application circuits of the fig. 2) the recommended values of the external components are those shown on the application circuit of figure 2. different values can be used; the following table can help the designer. (*) r1 = r3 for pop optimization (**) closed loop gain has to be 24db components suggested value purpose larger than suggested smaller than suggested r1 (*) 22k input resistance increase input impedance decrease input impedance r2 680 ? closed loop gain set to 30db (**) decrease of gain increase of gain r3 (*) 22k increase of gain decrease of gain r4 22k st-by time constant larger st-by on/off time smaller st-by on/off time; pop noise r5 10k mute time constant larger mute on/off time smaller mute on/off time c1 0.47 f input dc decoupling higher low frequency cutoff c2 22 f feedback dc decoupling higher low frequency cutoff c3 10 f mute time constant larger mute on/off time smaller mute on/off time c4 10 f st-by time constant larger st-by on/off time smaller st-by on/off time; pop noise c5 22 f bootstrapping signal degradation at low frequency c6, c8 1000 f supply voltage bypass danger of oscillation c7, c9 0.1 f supply voltage bypass danger of oscillation
tda7296 6/15 4 typical characteristics (application circuit of fig 2 unless otherwise specified) figure 6. : output power vs. supply voltage. figure 7. distortion vs. output power figure 8. output power vs. supply voltage figure 9. distortion vs. output power figure 10. distortion vs. frequency figure 11. distortion vs. frequency
7/15 tda7296 figure 12. quiescent current vs. supply voltage figure 13. supply voltage rejection vs. frequency figure 14. mute attenuation vs. v pin10 figure 15. st-by attenuation vs. v pin9 figure 16. power dissipation vs. output power figure 17. power dissipation vs. output power
tda7296 8/15 5 introduction in consumer electronics, an increasing demand has arisen for very high power monolithic audio amplifiers able to match, with a low cost the performance obtained from the best discrete designs. the task of realizing this linear integrated circuit in conventional bipolar technology is made extremely dif- ficult by the occurence of 2nd breakdown phenomenon. it limits the safe operating area (soa) of the pow- er devices, and as a consequence, the maximum attainable output power, especially in presence of highly reactive loads. moreover, full exploitation of the soa translates into a substantial increase in circuit and layout complexity due to the need for sophisticated protection circuits. to overcome these substantial drawbacks, the use of power mos devices, which are immune from sec- ondary breakdown is highly desirable. the device described has therefore been developed in a mixed bi- polar-mos high voltage technology called bcd 80. 5.1 output stage the main design task one is confronted with while developing an integrated circuit as a power operational amplifier, independently of the technology used, is that of realising the output stage. the solution shown as a principle schematic by fig 18 represents the dmos unity-gain output buffer of the tda7296. this large-signal, high-power buffer must be capable of handling extremely high current and voltage levels while maintaining acceptably low harmonic distortion and good behaviour over frequency response; more- over, an accurate control of quiescent current is required. a local linearizing feedback, provided by differential amplifier a, is used to fullfil the above requirements, allowing a simple and effective quiescent current setting. proper biasing of the power output transistors alone is however not enough to guarantee the absence of crossover distortion. while a linearization of the dc transfer characteristic of the stage is obtained, the dynamic behaviour of the system must be taken into account. a significant aid in keeping the distortion contributed by the final stage as low as possible is provided by the compensation scheme, which exploits the direct connection of the miller capacitor at the amplifier?s output to introduce a local ac feedback path enclosing the output stage itself. 5.2 protections in designing a power ic, particular attention must be reserved to the circuits devoted to protection of the device from short circuit or overload conditions. due to the absence of the 2nd breakdown phenomenon, the soa of the power dmos transistors is de- limited only by a maximum dissipation curve dependent on the duration of the applied stimulus. in order to fully exploit the capabilities of the power transistors, the protection scheme implemented in this device combines a conventional soa protection circuit with a novel local temperature sensing technique which " dynamically" controls the maximum dissipation. figure 18. principle schematic of a dmos unity-gain buffer.
9/15 tda7296 figure 19. turn on/off suggested sequence in addition to the overload protection described above, the device features a thermal shutdown circuit which initially puts the device into a muting state (@ tj = 145c) and then into stand-by (@ tj = 150c). full protection against electrostatic discharges on every pin is included. 5.3 other features the device is provided with both stand-by and mute functions, independently driven by two cmos logic compatible input pins. the circuits dedicated to the switching on and off of the amplifier have been carefully optimized to avoid any kind of uncontrolled audible transient at the output. the sequence that we recommend during the on/off transients is shown by figure 19. the application of figure 20 shows the possibility of using only one command for both st-by and mute func- tions. on both the pins, the maximum applicable range corresponds to the operating supply voltage. play off st-by mute mute st-by off d93au013 5v 5v +vs (v) +35 -35 v mute pin #10 (v) v st-by pin #9 (v) -vs v in (mv) i p (ma) v out (v)
tda7296 10/15 figure 20. single signal st-by/mute control circuit 6 bridge application another application suggestion is the bridge configuration, where two tda7296 are used, as shown by the schematic diagram. in this application, the value of the load must not be lower than 8 ohm for dissipation and current capability reasons. a suitable field of application includes hi-fi/tv subwoofers realizations. the main advantages offered by this solution are: ? high power performances with limited supply voltage level. ? considerably high output power even with high load values (i.e. 16 ohm). the characteristics shown by figures 23 and 24, measured with loads respectively 8 ohm and 16 ohm. with r l = 8 ohm, v s = 18v the maximum output power obtainable is 60w, while with r l =16 ohm, v s = 24v the maximum pout is 60w. figure 21. bridge application circuit 1n4148 10k 30k 20k 10 f 10 f mute stby d93au014 mute/ st-by 22k 0.56 f 2200 f 0.22 f + - 22 f 22k 680 22k 3 1 4 13 7 +vs vi 8 15 2 14 6 10 9 + - 3 0.56 f 22k 1 4 2 14 6 22 f 22k 680 10 9 22 f 15 8 -vs 2200 f 0.22 f 22 f 20k 10k 30k 1n4148 st-by/mute 13 7 d93au015a
11/15 tda7296 figure 22. frequency response of the bridge application figure 23. distortion vs. output power figure 24. distortion vs. output power
tda7296 12/15 figure 25. multiwatt15v mechanical data & package dimensions outline and mechanical data 0016036 j dim. mm inch min. typ. max. min. typ. max. a5 0.197 b 2.65 0.104 c 1.6 0.063 d 1 0.039 e 0.49 0.55 0.019 0.022 f 0.66 0.75 0.026 0.030 g 1.02 1.27 1.52 0.040 0.050 0.060 g1 17.53 17.78 18.03 0.690 0.700 0.710 h1 19.6 0.772 h2 20.2 0.795 l 21.9 22.2 22.5 0.862 0.874 0.886 l1 21.7 22.1 22.5 0.854 0.87 0.886 l2 17.65 18.1 0.695 0.713 l3 17.25 17.5 17.75 0.679 0.689 0.699 l4 10.3 10.7 10.9 0.406 0.421 0.429 l7 2.65 2.9 0.104 0.114 m 4.25 4.55 4.85 0.167 0.179 0.191 m1 4.73 5.08 5.43 0.186 0.200 0.214 s 1.9 2.6 0.075 0.102 s1 1.9 2.6 0.075 0.102 dia1 3.65 3.85 0.144 0.152 multiwatt15 (vertical)
13/15 tda7296 figure 26. multiwatt15 horizontal (short leads) mechanical data & package dimensions outline and mechanical data a c b e l5 l7 l1 l2 f g1 g h2 l4 l3 s1 s h1 diam 1 mw15hme v v v v v h2 n r1 p r r 0067558 e dim. mm inch min. typ. max. min. typ. max. a50.197 b 2.65 0.104 c1.60.063 e 0.49 0.55 0.019 0.022 f 0.66 0.75 0.026 0.030 g 1.02 1.27 1.52 0.040 0.050 0.060 g1 17.53 17.78 18.03 0.690 0.700 0.709 h1 19.6 20.2 0.772 0.795 h2 19.6 20.2 0.772 0.795 l1 17.80 18.00 18.20 0.701 0.709 0.717 l2 2.54 0.100 l3 17.25 17.5 17.75 0.679 0.689 0.699 l4 10.3 10.7 10.9 0.406 0.421 0.429 l5 2.70 3.00 3.30 0.106 0.118 0.130 l7 2.65 2.9 0.104 0.114 r 1.5 0.059 s 1.9 2.6 0.075 0.102 s1 1.9 2.6 0.075 0.102 dia1 3.65 3.85 0.144 0.152 multiwatt15 h (short leads)
tda7296 14/15 table 5. revision history date revision description of changes january 2004 8 first issue in edocs dms september 2004 9 added package multiwatt15 horizontal (short leads) february 2005 10 corrected mistyping error in table 2.
information furnished is believed to be accurate and reliable. however, stmicroelectronics assu mes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replac es all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners ? 2005 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com 15/15 tda7296

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